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PTF12N60

Features
■ RDS(on) (Max 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 50nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
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PTF10N65

Features
■ RDS(on) (Typical 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 45nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
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PTF10N60

Features
10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
Low gate charge ( typical 48nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
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PTF8N60

Features
■ RDS(on) (Max 1.2 Ω )@VGS=10V
■ Gate Charge(Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)
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PTF5N60

Features
■4.5A,600v,RDS(on)=2.5Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■Fast switching
■100% AvalancheTested
■Improved dv/dt capability

General Description

This Power MOSFET is producedusingPHILOP’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimizeon-state resistance, have a highrugged avalanche characteristics, suchas fastswitching time,lowon resistance.low gate charge and especially excellentavalanchecharacteristics.Thispower MOS ET is usually usedatF ACadaptors, on the batterychargerand SMPS
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PTF3N80

Features
■ RDS(on) (Max 5.0 Ω )@VGS=10V
■ Gate Charge(Typical 15.0nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)
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PTD7580

Description
The PTD7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
● VDS = 75V,ID =80ARDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）
● Special process technology for high ESD capability
● Special designed for convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
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PTD630

200V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 22 nC (Typ.)
●BVDSS=200V,ID=9A
●Lower RDS(on) : 0.4 Ω (Max) @VG=10V
●100% Avalanche Tested
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PTD50N03

60A , 25 V N-Channel MOSFET
Features
●RDS(ON) = 5.2mΩ @VGS = 10 V
●Low capacitance
●Optimized gate charge
●Fast switching capability
●Avalanche energy specified
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PTD30P55

DescriptionThe PTD30P55 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-55V,ID =-30ARDS(ON) <40mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
●Power switching application
●Hard switched and high frequency circuits
●Uninterruptible power supply
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PTD7N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested
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PTD6N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested
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PTD6N60

600V N-Channel MOSFET
Features
● Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Extended Safe Operating Area
● Unrivalled Gate Charge : 16 nC (Typ.)
● BVDSS=600V,ID=6A
● Lower RDS(on) : 1.5Ω (Max) @VG=10V
● 100% Avalanche Tested
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PTD5N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.5Ω (Max) @VG=10V
●100% Avalanche Tested
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PTD5N50

N-Channel MOSFET
Features
■ RDS(on) (Max 1.5Ω) @ VGS=10V
■ GateCharge(Typical 20nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■MaximumJunctionTemperatureRange(150°C)

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PTD2N80

HIGH VOLTAGE N-Channel MOSFET600V N-Channel MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :12 nC (Typ.)
●BVDSS=800V,ID=2A
●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
●100% Avalanche Tested
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PTR1N60

N-CHANNEL 600V - 8 W - 1A DPAK / IPAK / TO-92Power MOSFET
●TYPICAL RDS(on) = 8 W
●EXTREMELY HIGH dv/dt CAPABILITY
● 100% AVALANCHE TESTED
●GATE CHARGE MINIMIZED
●NEW HIGH VOLTAGE BENCHMARK

APPLICATIONS
●SWITCH MODE LOW POWER SUPPLIES(SMPS)
●LOW POWER, LOW COST CFL (COMPACTFLUORESCENT LAMPS)
● LOW POWER BATTERY CHARGERS
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PTF9N90

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：900
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：9
PD* (W) 25°C：45
RDS(ON) (mΩ max) at VGS= 10V：1.9
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTP9N90

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：900
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：9
PD* (W) 25°C：240
RDS(ON) (mΩ max) at VGS= 10V：1.9
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTF7N80

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：800
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：7
PD* (W) 25°C：45
RDS(ON) (mΩ max) at VGS= 10V：1.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTP7N80

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：800
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：7
PD* (W) 25°C：240
RDS(ON) (mΩ max) at VGS= 10V：1.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTF12N65

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：12
PD* (W) 25°C：45
RDS(ON) (mΩ max) at VGS= 10V：0.75
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTP12N65

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：12
PD* (W) 25°C：240
RDS(ON) (mΩ max) at VGS= 10V：0.75
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTF10N65

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：10
PD* (W) 25°C：40
RDS(ON) (mΩ max) at VGS= 10V：0.95
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTP10N65

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：10
PD* (W) 25°C：210
RDS(ON) (mΩ max) at VGS= 10V：0.95
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTF7N65

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：7
PD* (W) 25°C：38
RDS(ON) (mΩ max) at VGS= 10V：1.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTP7N65

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：7
PD* (W) 25°C：160
RDS(ON) (mΩ max) at VGS= 10V：1.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTF4N65

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：4
PD* (W) 25°C：35
RDS(ON) (mΩ max) at VGS= 10V：3
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTP4N65

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：4
PD* (W) 25°C：70
RDS(ON) (mΩ max) at VGS= 10V：3
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTU4N65

封装形式：TO-251
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：4
PD* (W) 25°C：32
RDS(ON) (mΩ max) at VGS= 10V：3
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTD4N65

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：4
PD* (W) 25°C：32
RDS(ON) (mΩ max) at VGS= 10V：3
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTP2N65

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：2
PD* (W) 25°C：75
RDS(ON) (mΩ max) at VGS= 10V：5
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTU2N65

封装形式：TO-251
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：2
PD* (W) 25°C：36
RDS(ON) (mΩ max) at VGS= 10V：5
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTD2N65

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：2
PD* (W) 25°C：36
RDS(ON) (mΩ max) at VGS= 10V：5
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTF2N65

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：650
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：2
PD* (W) 25°C：36
RDS(ON) (mΩ max) at VGS= 10V：5
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTP12N60

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：600
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：12
PD* (W) 25°C：240
RDS(ON) (mΩ max) at VGS= 10V：0.65
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTP10N60

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：600
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：10
PD* (W) 25°C：210
RDS(ON) (mΩ max) at VGS= 10V：0.75
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS
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PTF7N60

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：600
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：7
PD* (W) 25°C：38
RDS(ON) (mΩ max) at VGS= 10V：1.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTP7N60

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：600
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：7
PD* (W) 25°C：160
RDS(ON) (mΩ max) at VGS= 10V：1.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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PTP4N60

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：600
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：4
PD* (W) 25°C：75
RDS(ON) (mΩ max) at VGS= 10V：2.7
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用SMPS Charger
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