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PT8822

VDS= 20V
RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ
RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ
RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Ideal for Li ion battery
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PT2010E

N-Channel Enhancement Mode Power MOSFET
Description
The PT2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =7A
RDS(ON) < 27mΩ @ VGS=2.5V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●PWM application
●Load switch
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PTY8726

Features
 Low On-Resistance
 Fast Switching
 100% Avalanche Tested
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
Description
PTY8726 designed by the trench process
techniques to achieve extremely low on-resistance.
Additional features of this design can operate at
high junction temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Motor
applications and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified.
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PTU06N02

Features
• Very Low RDS(on) @ 2.5V Logic.
• V Logic Level Control
• TO-251 Package
• Pb−Free, RoHS Compliant
Applications
• Low Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others
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PTI03N02

Features
• Very Low RDS(on) @ 2.5V Logic.
• 3.3V Logic Level Control
• TO-262 Package
• Pb−Free, RoHS Compliant
Applications
• Low Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others
BVDSS 20 V
ID 120 A
RDSON@VGS=4.5V 2.6 mΩ
RDSON@VGS=2.5V 3.8 mΩ
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SI2307

-30V P-Channel Enhancemen t M o d e M O S F E T
VDS= -30V
RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ
RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
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XP152A12COMR

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.8A＜130mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A＜190mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
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XP151A13COMR

20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@3.6A＜85mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 2.0A＜115mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
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XP151A13AOMR

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FDN335N

20V N-Channel Enhancemen t ModeMOSFET
VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=100mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
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FDN306P

-12V P-Channel Enhancemen t ModeMOSFET
Features
• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
RDS(ON) = 50 mΩ @ VGS = –2.5 V
RDS(ON) = 80 mΩ @ VGS = –1.8 V
• Fast switching speed
Applications
• Battery management
• Load switch
• Battery protection
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BSS84

-50V P-Channel Enhancement Mode MOSFET
VDS= -50V
RDS(ON), Vgs@-10V, Ids@-0.1A＜8Ω
RDS(ON), Vgs@-5, Ids@-0.1A ＜10Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

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2SC3356(4G）

TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
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2SC3356

TRANSISTOR(NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
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PTS9926B

Features
 BVDSS＞20V, RDS(ON)=11mΩ(Typ)@VGS=10V
 Low On-Resistance
 Fast Switching
    encapsulation：SOP-8
 Lead-Free,Hg-Free, Green Product
PTS9926B designed by the trench processing techniques to
achieve extremely low on-resistance. And fast switching
speed and improved transfer effective . These features
combine to make this design an extremely efficient and
reliable device for variety of DC-DC applications.
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PTS2017

20V/17A N-Channel Advanced Power MOSFET
Features
• Very Low RDS(on) @ 3.3V Logic.
• 3.3V Logic Level Control
• SOP8 Package
• Pb−Free, RoHS Compliant
Applications
• Low Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others
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PT4953B

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -2 0V
RDS(ON), Vgs@-4.5V, Ids@-3.0A = 100mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 120mΩ
Features
High power and current handing capability
Lead free product is acq uired
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PTMPD0203

FEATURE
·lndependent Pinout to Each Device to
Each Device to Ease Circuit Design
·High Current Schottky Diode
·Featuring a MOSFET and a
·Schottky Barrier Diode

APPLICATION
·Optinized for Portable Applications Like Cell Phones
Digital Cameras,Media Players,etc
·DC-DC Buck Circuits
·Li-ion Battery Applications
·Color Display and Camera Flash Regulators
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PTP3034

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：40
VGS (V)：±20
VTH (V)Typ：2
ID* (A) 25°C：240
PD* (W) 25°C：270
RDS(ON) (mΩ max) at VGS= 10V：3
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用     MOTO TOOL
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PTP1404

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：40
VGS (V)：±20
VTH (V)Typ：2.6
ID* (A) 25°C：180
PD* (W) 25°C：210
RDS(ON) (mΩ max) at VGS= 10V：3.6
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用     MOTO TOOL
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PTN6234

封装形式：PDFN5X6
类型：单N
ESD Diode：否
VDS (V)：40
VGS (V)：±20
VTH (V)Typ：1.8
ID* (A) 25°C：100
PD* (W) 25°C：130
RDS(ON) (mΩ max) at VGS= 10V：4
RDS(ON) (mΩ max) at VGS= 4.5V：6.5
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 QC /MOTO TOOL
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PTP440

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：40
VGS (V)：±20
VTH (V)Typ：1.8
ID* (A) 25°C：82
PD* (W) 25°C：80
RDS(ON) (mΩ max) at VGS= 10V：7.5
RDS(ON) (mΩ max) at VGS= 4.5V：9.5
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用     MOTO TOOL
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PTN6442

封装形式：PDFN5X6
类型：单N
ESD Diode：否
VDS (V)：40
VGS (V)：±20
VTH (V)Typ：1.8
ID* (A) 25°C：60
PD* (W) 25°C：32
RDS(ON) (mΩ max) at VGS= 10V：7.5
RDS(ON) (mΩ max) at VGS= 4.5V：9.5
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Load Switch
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PTS9468

封装形式：SOP8
类型：单N
ESD Diode：否
VDS (V)：40
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：150
PD* (W) 25°C：150
RDS(ON) (mΩ max) at VGS= 10V：1.9
RDS(ON) (mΩ max) at VGS= 4.5V：2.6
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Load Switch
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PTD6548

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：150
PD* (W) 25°C：150
RDS(ON) (mΩ max) at VGS= 10V：1.9
RDS(ON) (mΩ max) at VGS= 4.5V：2.6
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用           MOTO TOOL
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PTN6548

封装形式：PDFN5X6
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：150
PD* (W) 25°C：150
RDS(ON) (mΩ max) at VGS= 10V：1.8
RDS(ON) (mΩ max) at VGS= 4.5V：2.5
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用           MOTO TOOL
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PTD508

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：130
PD* (W) 25°C：150
RDS(ON) (mΩ max) at VGS= 10V：3.5
RDS(ON) (mΩ max) at VGS= 4.5V：5
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用           MOTO TOOL
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PTN6512

封装形式：PDFN5X6
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：130
PD* (W) 25°C：150
RDS(ON) (mΩ max) at VGS= 10V：3.5
RDS(ON) (mΩ max) at VGS= 4.5V：5
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用           MOTO TOOL
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PTS4240

封装形式：SOP8
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.3
ID* (A) 25°C：24
PD* (W) 25°C：3
RDS(ON) (mΩ max) at VGS= 10V：4
RDS(ON) (mΩ max) at VGS= 4.5V：5.5
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用           Load Switch
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PTD3098

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：90
PD* (W) 25°C：115
RDS(ON) (mΩ max) at VGS= 10V：5.5
RDS(ON) (mΩ max) at VGS= 4.5V：7
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Power Bank
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PTN3098

封装形式：PDFN5X6
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：90
PD* (W) 25°C：90
RDS(ON) (mΩ max) at VGS= 10V：5.5
RDS(ON) (mΩ max) at VGS= 4.5V：7
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Power Bank
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PTN7530

封装形式：PDFN3333
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：30
PD* (W) 25°C：20
RDS(ON) (mΩ max) at VGS= 10V：6
RDS(ON) (mΩ max) at VGS= 4.5V：8
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Load Switch
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PTD3006

封装形式：TO-525
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：80
PD* (W) 25°C：80
RDS(ON) (mΩ max) at VGS= 10V：7
RDS(ON) (mΩ max) at VGS= 4.5V：9
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用       Main Board
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PTN3006

封装形式：PDFN5X6
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：80
PD* (W) 25°C：65
RDS(ON) (mΩ max) at VGS= 10V：7
RDS(ON) (mΩ max) at VGS= 4.5V：9
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Main Board
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PTO3006

封装形式：PDFN3333
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：80
PD* (W) 25°C：42
RDS(ON) (mΩ max) at VGS= 10V：7
RDS(ON) (mΩ max) at VGS= 4.5V：9
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Main Board
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PT4430

封装形式：SOP88POS
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：18
PD* (W) 25°C：2.5
RDS(ON) (mΩ max) at VGS= 10V：7.5
RDS(ON) (mΩ max) at VGS= 4.5V：10
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Load Switch
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PT4410

封装形式：SOP8
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.1
ID* (A) 25°C：10
PD* (W) 25°C：2
RDS(ON) (mΩ max) at VGS= 10V：13.5
RDS(ON) (mΩ max) at VGS= 4.5V：20
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Load Switch
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PTS4566

封装形式：SOP8
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：12
PD* (W) 25°C：2.5
RDS(ON) (mΩ max) at VGS= 10V：12
RDS(ON) (mΩ max) at VGS= 4.5V：15
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Load Switch
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PTT7506

封装形式：PDFN333
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：18
PD* (W) 25°C：20
RDS(ON) (mΩ max) at VGS= 10V：12
RDS(ON) (mΩ max) at VGS= 4.5V：15
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Load Switch
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PTD3004

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：30
VGS (V)：±20
VTH (V)Typ：1.6
ID* (A) 25°C：50
PD* (W) 25°C：50
RDS(ON) (mΩ max) at VGS= 10V：13
RDS(ON) (mΩ max) at VGS= 4.5V：16
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用 Main Board
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